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FDB029N06 N-Channel PowerTrench(R) MOSFET
June 2009
FDB029N06
N-Channel PowerTrench(R) MOSFET
60V, 193A, 3.1m Features
* RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
* DC to DC Convertors / Synchronous Rectification
D D
G G S
D2-PAK FDB Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage -Continuous (TC = 25oC, Silicon Limited) Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 100oC, Silicon Limited) -Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 60 20 193* 136* 120 772 1434 6 231 1.54 -55 to +175 300 A mJ V/ns W W/oC
oC o
Units V V A
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.65 62.5 Units
o
C/W
(c)2009 Fairchild Semiconductor Corporation FDB029N06 Rev. A
1
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FDB029N06 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking FDB029N06 Device FDB029N06 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC VDS = 48V, VGS = 0V VDS = 48V, TC = 150oC VGS = 20V, VDS = 0V 60 0.05 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A
(Note 4)
2.5 -
3.5 2.4 154
4.5 3.1 -
V m S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 48V, ID = 75A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
7380 1095 415 116 40 35
9815 1455 625 151 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7
(Note 4, 5)
-
39 178 54 33
87 366 118 76
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s
(Note 4)
-
46 50
193 772 1.3 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 75A, di/dt 450A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDB029N06 Rev. A
2
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FDB029N06 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Figure 2. Transfer Characteristics
400
*Notes: 1. VDS = 10V 2. 250s Pulse Test
100
ID, Drain Current[A]
ID, Drain Current[A]
100
150 C
o
-55 C 25 C
o
o
10
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
10 0.1
1 1 VDS, Drain-Source Voltage[V] 5 2 4 6 VGS, Gate-Source Voltage[V] 8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
3.5
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
400
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
100
3.0
VGS = 10V
150 C 25 C
o
o
10
2.5
VGS = 20V
2.0 0 70
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
140 210 ID, Drain Current [A]
280
350
1 0.0
2. 250s Pulse Test
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
12000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 15V VDS = 30V VDS = 48V
9000
Capacitances [pF]
Ciss
8
6
6000
Coss
*Note: 1. VGS = 0V 2. f = 1MHz
4
3000
Crss
2
*Note: ID = 75A
0 0.1
0 1 10 VDS, Drain-Source Voltage [V] 30 0 20
40 60 80 100 Qg, Total Gate Charge [nC]
120
FDB029N06 Rev. A
3
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FDB029N06 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
2.0
1.1
1.5
1.0
*Notes: 1. VGS = 0V 2. ID = 10mA
1.0
*Notes: 1. VGS = 10V 2. ID = 75A
0.9 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.5 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
10000
Figure 10. Maximum Drain Current vs. Case Temperature
200
ID, Drain Current [A]
1000
ID, Drain Current [A]
150
100
100s
100
10
Operation in This Area is Limited by R DS(on) *Notes:
1ms
o o
Limited by package
50
1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
10ms 100ms DC
0.1 0.1
1 10 100 VDS, Drain-Source Voltage [V]
300
0 25
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [Z JC]
0.5
0.2
0.1
0.1 0.05 0.02 0.01
PDM t1 t2
*Notes: 1. ZJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
Single pulse
0.01 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDB029N06 Rev. A
4
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FDB029N06 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB029N06 Rev. A
5
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FDB029N06 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as D U T
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d
VGS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDB029N06 Rev. A
6
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FDB029N06 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
D2PAK D2PAK
Dimensions in Millimeters
FDB029N06 Rev. A
7
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TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM*
(R)
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Rev. I41
(c) 2008 Fairchild Semiconductor Corporation
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